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NTS4173PT1G

Part No NTS4173PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.2A SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 10.1nC @ 10V
Max Input Capacitance 430pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Dimension SC-70, SOT-323
Win Source Part Number 025832-NTS4173PT1G
Family Name NTS4173P
Introduction Date July 28, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTS4173PT1G CAD Model

Description

ON Semiconductor NTS4173PT1G

The NTS4173PT1G is a high-performance, small-signal N-Channel MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to deliver efficient power control and switching with low on-resistance and high-speed operation. It is commonly used in power management applications across various electronic devices such as computing systems, portable equipment, and power supply units.

Key Features

  • Low On-Resistance: The NTS4173PT1G offers extremely low on-resistance, which translates to reduced power loss and improved efficiency in applications where it is deployed.
  • High-Speed Switching: This component is optimized for fast switching speeds, making it an excellent choice for high-frequency power switching applications.
  • Low Threshold Voltage: The low gate threshold voltage ensures that the MOSFET can be driven at lower voltages, making it suitable for low voltage applications.
  • Advanced PowerTrench® Process: Utilizing ON Semiconductor's proprietary PowerTrench process, the NTS4173PT1G achieves superior performance in terms of switching speed and power handling.
  • ESD Protection: The device includes integrated ESD protection features, safeguarding it from electrostatic discharge events and enhancing its reliability and longevity.

Applications

  • Battery Management Systems
  • Load Switches
  • Power Conversion Circuits
  • DC-DC Converters
  • Portable Electronic Devices

Product Specifications

The NTS4173PT1G operates with a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 4.9A. Its power dissipation is rated at 1.4W, and it features a maximum junction temperature of 150°C. The device comes in a compact SOT-23 package, making it suitable for space-constrained applications.

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The NTS4173PT1G is RoHS compliant, ensuring that it meets the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment. It is also designed to meet or exceed industry standards for quality and reliability.

With its combination of efficiency, performance, and compact size, the NTS4173PT1G from ON Semiconductor is an ideal choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
365+ $0.1379 $50.3335
775+ $0.1291 $100.0525
1,205+ $0.1248 $150.3840
1,725+ $0.1160 $200.1000
2,240+ $0.1117 $250.2080
2,800+ $0.1073 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,611 pieces
MOQ: 365 pcs
Order Increment : 1 pcs
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