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NTZD3154NT1G

Part No NTZD3154NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.54A SOT-563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 540mA
Maximum Rds On at Id,Vgs 550 mOhm @ 540mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 150pF @ 16V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 025841-NTZD3154NT1G
Family Name NTZD3154N
Introduction Date July 08, 2004
ECCN EAR99
Country of Origin China, Taiwan
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian NTZD3154NT1G CAD Model

Description

The NTZD3154NT1G is a state-of-the-art Power MOSFET product from ON Semiconductor, designed to deliver high performance with low power consumption in a compact package. This dual N-Channel MOSFET is an ideal choice for a wide range of applications, including power management, load switching, and battery protection in portable electronics.

Key Features:

  • Low On-Resistance: The NTZD3154NT1G boasts an exceptionally low on-resistance, which translates to reduced power losses during operation and enhances overall efficiency.
  • Dual N-Channel Configuration: This device integrates two N-Channel MOSFETs, making it perfect for applications that require a compact solution with dual functionality.
  • High Current Capability: With a continuous drain current rating of 3.7 A, this MOSFET can handle significant current loads, making it suitable for high-power applications.
  • ESD Protection: The built-in Electrostatic Discharge (ESD) protection shields the device from inadvertent electrical discharges, ensuring reliability and longevity.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, which is particularly advantageous in low-voltage applications.
  • Compact SOT-563 Package: The small footprint of the SOT-563 package allows for space-saving designs, which is critical in portable and space-constrained applications.

Applications:

  • Power Management Circuits
  • Load Switching
  • Battery Protection
  • Portable Electronic Devices
  • DC-DC Converters
  • Power Supply Control

The NTZD3154NT1G from ON Semiconductor represents a perfect blend of efficiency, reliability, and miniaturization, making it an excellent choice for modern electronic applications that demand high performance in a small package. Whether you are designing power management systems or seeking a reliable switch for your portable device, the NTZD3154NT1G offers the features and specifications necessary to meet those needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,060+ $0.0472 $50.0320
2,265+ $0.0442 $100.1130
3,515+ $0.0427 $150.0905
5,030+ $0.0398 $200.1940
6,530+ $0.0383 $250.0990
8,155+ $0.0368 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 195,639 pieces
MOQ: 1060 pcs
Order Increment : 1 pcs
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