The ON Semiconductor NVD5806NT4G is a high-performance, Power MOSFET designed to meet the rigorous demands of today's advanced electronic devices. This MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient, robust, and reliable solutions for power management challenges in a diverse range of applications.

Key Features

• Type: N-Channel
• Voltage - Breakdown (V<sub>BR/DSS): 60V
• Current - Continuous Drain (I<sub>D) @ 25°C: 4A (Ta)
• R<sub>DS(on) Max @ Id, Vgs: 135 mOhm @ 2.5A, 10V
• Drive Voltage (Max R<sub>DS On, Min R<sub>DS On): 4.5V, 10V
• V<sub>GS(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Q<sub>g) (Max) @ V<sub>GS: 8.7nC @ 10V
• Input Capacitance (C<sub>iss) (Max) @ V<sub>DS: 488pF @ 25V
• Power Dissipation (P<sub>D): 1.25W (Ta)

Applications

The NVD5806NT4G is suited for a wide range of applications, including but not limited to:

• DC/DC Converters
• Power Management Functions
• Load Switches
• Battery Powered Systems
• Motor Drives

Quality and Reliability

ON Semiconductor is renowned for its high standards in manufacturing quality and reliability. The NVD5806NT4G MOSFET is no exception, offering excellent thermal and electrical characteristics. It is housed in a compact DPAK (TO-252) package, which ensures a small footprint while providing robustness and ease of installation in various circuit designs.

Environmental Compliance

The NVD5806NT4G is compliant with RoHS (Restriction of Hazardous Substances) and is lead-free, signifying ON Semiconductor's dedication to environmental responsibility and the production of components safe for both consumers and the environment.