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NVD5890NLT4G

Part No NVD5890NLT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 24A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 40V 123A DPAK
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 42nC @ 4.5V
Max Input Capacitance 4760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4W (Ta), 107W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209383-NVD5890NLT4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NVD5890NL
ECCN EAR99
Country of Origin Malaysia, Vietnam
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NVD5890NLT4G CAD Model

Description

ON Semiconductor NVD5890NLT4G Product Overview

The ON Semiconductor NVD5890NLT4G is a robust and efficient N-channel Power MOSFET designed to deliver high-performance solutions for a wide range of power management applications. This state-of-the-art component is engineered to minimize on-state resistance while providing high switching performance, making it an ideal choice for power supply designs that demand energy efficiency and reliability.

Key Features

  • Low On-Resistance: The NVD5890NLT4G boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capability: With the ability to handle significant current levels, this MOSFET is suitable for high current applications, ensuring that power delivery is both stable and efficient.
  • High-Temperature Performance: It is designed to operate effectively over a wide temperature range, which ensures reliable performance even under challenging thermal conditions.
  • Logic Level Gate Drive: The device can be driven by logic-level voltages, simplifying the drive circuitry and making it compatible with a wide range of control ICs.

Applications

The versatility of the NVD5890NLT4G allows it to be used in various applications, including:

  • DC/DC Converters
  • Power Management for Computers and Servers
  • Motor Drives and Controllers
  • Switch Mode Power Supplies (SMPS)
  • Battery Management Systems
  • Load Switching Applications

Technical Specifications

With a continuous drain current (I<sub>D) rating of up to 30A and a drain-source voltage (V<sub>DSS) of 40V, the NVD5890NLT4G is capable of handling high power levels. The product comes in a compact and surface-mountable DPAK (TO-252) package, which ensures ease of integration into various circuit designs while saving board space.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NVD5890NLT4G is no exception. It is produced under strict quality control standards and is designed to meet or exceed industry reliability standards, giving designers confidence in their power management systems.

Whether you are designing power supplies for consumer electronics, industrial systems, or automotive applications, the NVD5890NLT4G from ON Semiconductor provides the performance, efficiency, and reliability required to meet the demands of modern power management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,370 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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