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NVHL027N65S3F

Part No NVHL027N65S3F
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 75A TO247-3  /  N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101, SuperFET® III, FRFET®
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 227 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7780 pF @ 400 V
Power Dissipation (Max) 595W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number NVHL027
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-NVHL027N65S3F-488,NVHL027N65S3FOS,1990-NVHL027N65S3F,2832-NVHL027N65S3F,NVHL027N65S3F-ND
Standard Package 30
Win Source Part Number 1062946-NVHL027N65S3F
Ultra Librarian 3D Model Ultra Librarian NVHL027N65S3F CAD Model

Description

The NVHL027N65S3F is a high-performance, N-channel SuperFET® III MOSFET from ON Semiconductor, designed to deliver exceptional power efficiency and reliability for a wide range of applications. This device is a part of the renowned SuperFET III series, which is known for its superior switching performance and low on-resistance. With a 650V drain-to-source voltage (V<sub>DS), it is particularly suited for high-voltage power conversion systems.

The NVHL027N65S3F features a robust and rugged design, providing a maximum continuous drain current (I<sub>D) of 27A at 25°C, which ensures that the device can handle significant power without compromising on performance. The low gate charge (Q<sub>g) and reduced EMI characteristics make it an excellent choice for high-speed switching applications, such as power supplies, lighting, industrial equipment, and electric vehicle (EV) charging systems.

With an R<sub>DS(on) of just 65 mΩ, this MOSFET minimizes conduction losses, enhancing the overall efficiency of the system it is integrated into. The device's fast intrinsic diode with a soft recovery profile is another feature that contributes to its high efficiency, especially in hard-switching applications. This characteristic also helps to reduce stress on the device during high-speed switching operations, thus extending its lifespan.

The NVHL027N65S3F is housed in an industry-standard TO-247 package, which offers excellent thermal performance and is compatible with a variety of heatsinking methods. This packaging, combined with the device's high junction temperature capability (T<sub>J), allows for reliable operation even under extreme conditions.

ON Semiconductor has equipped the NVHL027N65S3F with multiple protection features, including a robust body diode and a high avalanche energy rating. This ensures that the device can withstand harsh electrical environments and provides designers with a greater safety margin in their applications.

In summary, the NVHL027N65S3F from ON Semiconductor is a state-of-the-art power MOSFET that offers excellent performance, high efficiency, and reliability for demanding power applications. Its advanced features and robust design make it an ideal choice for engineers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.6537 $61.9611
6+ $16.9467 $101.6802
10+ $16.4171 $164.1710
13+ $15.8875 $206.5375
17+ $15.3579 $261.0843
22+ $13.7692 $302.9224
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 180 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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