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NVMFD5C466NT1G

Part No NVMFD5C466NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 40V 8.1 MOHM T8 S08FL DUA  /  Mosfet Array 2 N-Channel (Dual) 40V 14A (Ta), 49A (Tc) 3W (Ta), 38W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Power - Max 3W (Ta), 38W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Win Source Part Number 1117786-NVMFD5C466NT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5C466NT1G CAD Model

Description

ON Semiconductor NVMFD5C466NT1G Power MOSFET

The ON Semiconductor NVMFD5C466NT1G is a cutting-edge Power MOSFET designed to deliver high efficiency and power density in a compact package. This device is ideal for a wide range of applications, including power supply, automotive, and industrial systems where efficient power conversion is critical.

Constructed with ON Semiconductor's advanced technology, the NVMFD5C466NT1G offers an optimal balance of on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), resulting in reduced conduction and switching losses. This Power MOSFET is characterized by a 40V drain-to-source breakdown voltage (V<sub>DSS), which ensures reliable operation under various conditions. The continuous drain current (I<sub>D) is rated at 100A, allowing for robust performance in high-power applications.

The NVMFD5C466NT1G comes in a compact 5x6 mm² dual-cooled PowerDFN8 package that features dual-sided cooling to enhance thermal performance. This innovative package design allows for efficient heat dissipation, which is vital for maintaining stability and extending the lifespan of the device. The low profile and small footprint of the package make it suitable for space-constrained applications.

With its low gate-to-drain charge (Q<sub>gd), the NVMFD5C466NT1G exhibits fast switching behavior, which is essential for minimizing transition losses in high-frequency power conversion systems. Additionally, the device boasts a robust and rugged body diode, which can handle high surge currents without degradation, thereby providing additional protection against extreme operating conditions.

Environmental sustainability is a key consideration in modern electronics, and the NVMFD5C466NT1G meets these demands by being RoHS compliant and halogen-free. This ensures that the product is not only high-performing but also environmentally friendly, aligning with global standards for electronic components.

In summary, the ON Semiconductor NVMFD5C466NT1G Power MOSFET is a highly efficient, thermally-optimized, and reliable solution for designers looking to optimize their power management systems with a component that offers high current capability, fast switching speeds, and a small form factor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1036 $60.6980
130+ $0.9055 $117.7150
200+ $0.8773 $175.4600
275+ $0.8489 $233.4475
355+ $0.8207 $291.3485
475+ $0.7357 $349.4575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,760 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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