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Same model may have multiple batches, images only for reference.
SIHB21N65EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB21N65EF-GE3

Part No SIHB21N65EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHB21N65EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2322 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB21
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277862-SIHB21N65EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB21N65EF-GE3 CAD Model

Description

The Vishay Siliconix is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 21A (Tc) @ 25°C.

  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Standard Package: 1,000
  • Gate Charge (Qg): 106 nC @ 10 V
  • Input Capacitance (Ciss): 2322 pF @ 100 Vds
  • Supply and Demand Status: Balanced
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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