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SIUD401ED-T1-GE3

Name: SIUD401ED-T1-GE3
Brand: Vishay
SKU: 1277678
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIUD401ED-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIUD401ED-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	TrenchFET® Gen III
Package	Tape & Reel
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.573Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	33 pF @ 15 V
Power Dissipation (Max)	1.25W (Ta)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PowerPAK® 0806
Package / Case	PowerPAK® 0806
Base Product Number	SIUD401
Other Names	SIUD401ED-T1-GE3CT,SIUD401ED-T1-GE3TR,SIUD401ED-T1-GE3DKR
Standard Package	3,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277678-SIUD401ED-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SIUD401ED-T1-GE3 CAD Model

Alternative Products

Description

The SIUD401ED-T1-GE3 is a P-Channel MOSFET transistor from Vishay Siliconix.

Series: TrenchFET Gen III
Discrete Semiconductor Product: single-transistor FETs
Drain-to-Source Voltage (Vdss): 30V
Continuous Drain Current (Id) @ 25°C: 500mA
On-Resistance (Rds On): 1.573Ohm @ 200mA and 10V
Gate Charge (Qg): 2nC @ 10V
Input Capacitance (Ciss): 33pF @ 15Vds
Package: PowerPAK 0806 package
Tape and Reel Compatible: Yes
Operating Temperature: -55°C and 150°C
Maximum Power Dissipation @ Ambient Temperature: 1.25W

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