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NVMFD5C478NLWFT1G

Part No NVMFD5C478NLWFT1G
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description 40V 14.5 MOHM T8 S08FL DU
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs 14.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Power - Max 3.1W (Ta), 23W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD5
Standard Package 1,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 964896-NVMFD5C478NLWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5C478NLWFT1G CAD Model

Description

ON Semiconductor NVMFD5C478NLWFT1G MOSFET

The ON Semiconductor NVMFD5C478NLWFT1G is a state-of-the-art, high-performance MOSFET designed for a wide range of applications that require efficient power management and reliability. This MOSFET is part of ON Semiconductor's extensive portfolio of power solutions that cater to the evolving needs of modern electronic systems. With its advanced technology and superior design, the NVMFD5C478NLWFT1G is an ideal choice for engineers looking to enhance the efficiency and performance of their power conversion systems.

The NVMFD5C478NLWFT1G is built with a focus on minimizing on-resistance (R<sub>DS(on)) and maximizing load efficiency, which is crucial for reducing power losses and improving overall system performance. This MOSFET features a single N-channel configuration, which is known for its ease of drive and simplicity in various circuit designs. The device operates with a maximum continuous drain current (I<sub>D) of 30 A, making it suitable for handling high-power applications.

With a maximum drain-source voltage (V<sub>DSS) of 30 V, the NVMFD5C478NLWFT1G ensures a robust and reliable operation even under stressful conditions. Its low gate charge (Q<sub>G) and fast switching capabilities make it an excellent choice for high-frequency power switching applications. The MOSFET's power dissipation is also optimized to ensure long-term reliability and a wide safe operating area.

The NVMFD5C478NLWFT1G comes in a compact, surface-mount package that is both space-saving and conducive to high-density PCB layouts. This feature is particularly beneficial for applications with limited board space, such as portable electronics, computing devices, and power supply units. Additionally, the device is designed to meet rigorous industry standards, ensuring compatibility with a wide range of applications and providing engineers with a versatile component for their designs.

ON Semiconductor's commitment to quality and performance is evident in the NVMFD5C478NLWFT1G MOSFET. Whether used in power management for consumer electronics, industrial systems, or automotive applications, this MOSFET is engineered to deliver efficient, reliable power control to meet the demands of today's sophisticated electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2176 $60.8800
120+ $0.9991 $119.8920
180+ $0.9679 $174.2220
250+ $0.9367 $234.1750
320+ $0.9054 $289.7280
430+ $0.8117 $349.0310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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