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NVMFS5833NT3G

Part No NVMFS5833NT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 16A 5DFN / N-Channel 40 V 16A (Ta) 3.7W (Ta), 112W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1714 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 112W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5833
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000 pcs
Win Source Part Number 1383089-NVMFS5833NT3G
Ultra Librarian 3D Model Ultra Librarian NVMFS5833NT3G CAD Model

Description

ON Semiconductor NVMFS5833NT3G - Power MOSFET

The ON Semiconductor NVMFS5833NT3G is a high-performance Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are crafted to meet the demanding requirements of modern electronic circuits.

Featuring a compact footprint, the NVMFS5833NT3G offers designers a solution that is both space-saving and powerful. It is housed in a 5x6 mm² flat lead package that provides excellent thermal performance and is suitable for a variety of power management tasks.

Key Features:

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of 3.3 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 150 A, this MOSFET can handle high current loads, making it suitable for demanding power supply and conversion systems.
  • Robust Thermal Performance: The NVMFS5833NT3G is designed to operate reliably even at high temperatures, with a maximum junction temperature of 150°C, ensuring stability under thermal stress.
  • Low Gate Charge: The low gate charge (Q<sub>G) of this device allows for fast switching speeds, which is crucial for reducing switching losses in high-frequency power converters and regulators.

Applications:

The NVMFS5833NT3G is versatile and can be used in a range of applications, including:

  • DC/DC Converters
  • Power Supplies for Servers and Telecom Systems
  • Motor Drives and Inverters
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Modules

With its combination of high efficiency, robust performance, and compact size, the ON Semiconductor NVMFS5833NT3G Power MOSFET is an excellent choice for engineers looking to improve power density and efficiency in their designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,575+ $0.0367 $57.8025
3,835+ $0.0302 $115.8170
5,930+ $0.0293 $173.7490
8,165+ $0.0283 $231.0695
10,550+ $0.0274 $289.0700
14,155+ $0.0245 $346.7975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 1575 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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