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NVMFS5C430NAFT1G

Part No NVMFS5C430NAFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 35A/185A 5DFN / N-Channel 40 V 35A (Ta), 185A (Tc) 3.8W (Ta), 106W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 106W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Win Source Part Number 972095-NVMFS5C430NAFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C430NAFT1G CAD Model

Description

ON Semiconductor NVMFS5C430NAFT1G Overview

The NVMFS5C430NAFT1G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider in energy-efficient innovations. This MOSFET is part of ON Semiconductor's comprehensive portfolio of power management solutions, tailored for a wide range of applications. With its advanced technology, it ensures efficient power conversion and reliable operation in various electronic devices.

Key Features

  • Low On-Resistance: The device offers an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in power circuits.
  • High Current Capability: NVMFS5C430NAFT1G is capable of handling high continuous drain currents, making it suitable for high-power applications.
  • Power Dissipation: It has a robust power dissipation capacity that ensures reliable performance under varying thermal conditions.
  • Fast Switching Speed: The MOSFET is designed for fast switching, thereby minimizing switching losses and improving performance in high-frequency power switching applications.
  • Low Gate Charge: A low total gate charge (QG) helps in reducing the driving power required, further optimizing the power management in electronic systems.

Applications

The NVMFS5C430NAFT1G is ideal for a broad spectrum of applications, including but not limited to:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Automotive Systems
  • Computing and Server Systems
  • Power Management in Portable Devices

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The NVMFS5C430NAFT1G MOSFET is no exception, as it undergoes rigorous testing and quality control procedures to ensure it meets industry standards and customer expectations.

In summary, the NVMFS5C430NAFT1G from ON Semiconductor is a versatile and efficient power MOSFET that offers outstanding performance for a wide range of power management applications. Its advanced features enable designers to achieve more efficient, compact, and reliable electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2109 $50.8507
56+ $1.8141 $101.5896
86+ $1.7574 $151.1364
118+ $1.7007 $200.6826
153+ $1.6440 $251.5320
204+ $1.4740 $300.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,860 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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