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Same model may have multiple batches, images only for reference.
SUP45P03-09-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUP45P03-09-GE3

Part No SUP45P03-09-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUP45P03-09-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 15 V
Power Dissipation (Max) 73.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SUP45
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277899-SUP45P03-09-GE3
Ultra Librarian 3D Model Ultra Librarian SUP45P03-09-GE3 CAD Model

Description

The SUP45P03-09-GE3 is a P-Channel MOSFET transistor from Vishay Siliconix that is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

  • Package: TO-220-3
  • Supply: On tape and reel
  • Drain to Source Voltage (Vdss): 30 V
  • Current: 45A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
  • Temperature Range: -55°C ~ 150°C (TJ)

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