The NVMFS5C468NT1G is a state-of-the-art, high-efficiency, N-channel Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing a compact, high-performance solution for a wide range of power management applications.
Key Features
- Low R<sub>DS(on): The device boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
- High Continuous Drain Current (I<sub>D): It is capable of supporting a continuous drain current, enabling it to handle high power levels required by demanding applications.
- High-Temperature Performance: The MOSFET is designed to operate reliably over a wide temperature range, making it suitable for high-temperature environments.
- Single Pulse Avalanche Energy Rated: This feature ensures the device can withstand high-energy pulses, providing robustness and reliability in circuits that may experience surges or spikes.
- Low Capacitance: The device has low input and output capacitance, which minimizes switching losses and allows for faster switching speeds.
- RoHS Compliant: The NVMFS5C468NT1G is compliant with the Restriction of Hazardous Substances Directive, making it an environmentally friendly choice for electronic manufacturers.
Applications
The versatility of the NVMFS5C468NT1G makes it an ideal choice for a variety of applications, including:
- DC/DC Converters
- Power Supply Modules
- Motor Drives
- Automotive Systems
- Computing and Server Systems
- Power Management in Portable Devices
Product Specifications
Parameter
Value
R<sub>DS(on)
Typically 1.7 mΩ
I<sub>D
Up to 317 A
Package
5x6mm PDFN
Temperature Range
-55°C to +175°C
The NVMFS5C468NT1G by ON Semiconductor represents a blend of performance, efficiency, and reliability, making it a top choice for designers seeking to optimize their power management solutions.