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NVMFS6H800NLT1G

Part No NVMFS6H800NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A/224A 5DFN / N-Channel 80 V 30A (Ta), 224A (Tc) 3.9W (Ta), 214W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 30A, 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 40 V
Power Dissipation (Max) 3.9W, 214W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Case / Package 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NVMFS6H800NLT1GDKR,488-NVMFS6H800NLT1GTR,488-NVMFS6H800NLT1GCT,NVMFS6H800NLT1G-ND
Standard Package 1,500
Win Source Part Number 1324428-NVMFS6H800NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H800NLT1G CAD Model

Description

ON Semiconductor NVMFS6H800NLT1G MOSFET

The ON Semiconductor NVMFS6H800NLT1G is a high-performance, N-channel Power MOSFET designed to deliver efficiency and power density in a compact footprint. Engineered for automotive applications, this MOSFET leverages the latest silicon technology to offer superior switching performance and robustness. It is an ideal choice for powertrain systems, DC-DC converters, and other high-reliability automotive applications that demand high efficiency and power density.

Key Features:

  • Low RDS(on): The NVMFS6H800NLT1G features an extremely low on-resistance (RDS(on)), which translates into lower conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: With a continuous drain current (ID) rating of 48A, this MOSFET can handle high current applications with ease, making it suitable for demanding automotive environments.
  • High Temperature Performance: It is designed to operate at high temperatures, maintaining stability and reliability even under thermal stress, with a maximum junction temperature (Tj) of 175°C.
  • Single Pulse Avalanche Energy Rated: The device is rated for avalanche energy, ensuring it can withstand energy spikes and enhancing its ruggedness in harsh conditions.
  • Low Gate Charge (Qg): The device has a low total gate charge, which leads to reduced switching losses and faster switching speeds, contributing to overall system efficiency.
  • Optimized for 5V Gate Drive: Optimized to work with 5V gate drive voltages, this MOSFET can be easily driven by standard control ICs, simplifying design integration.

Applications:

  • Automotive Powertrain Systems
  • DC-DC Converters
  • Power Management Solutions
  • Load Switching
  • Motor Control Circuits

The NVMFS6H800NLT1G by ON Semiconductor brings together state-of-the-art technology with the robustness required by automotive industry standards. Its compact, surface-mount package ensures a minimal footprint on the PCB while providing exceptional thermal performance. Whether you are designing energy-efficient powertrain modules or reliable motor control systems, the NVMFS6H800NLT1G is engineered to meet the stringent requirements of modern automotive electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.7191 $53.5955
12+ $8.7952 $105.5424
18+ $8.5204 $153.3672
25+ $8.2455 $206.1375
32+ $7.9707 $255.0624
42+ $7.1461 $300.1362
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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