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NVMFS6H824NLT1G

Part No NVMFS6H824NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 20A/110A 5DFN / N-Channel 80 V 20A (Ta), 110A (Tc) 3.8W (Ta), 116W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) , 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 40 V
Power Dissipation (Max) 3.8W (Ta) , 116W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1341032-NVMFS6H824NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H824NLT1G CAD Model

Description

ON Semiconductor NVMFS6H824NLT1G Power MOSFET

The NVMFS6H824NLT1G is a high-performance Power MOSFET from ON Semiconductor, designed to meet the demanding requirements of modern electronic circuits. This advanced power management component is ideal for a wide range of applications, from automotive systems to industrial power management, due to its efficiency and reliability.

Constructed with ON Semiconductor's cutting-edge technology, the NVMFS6H824NLT1G offers outstanding on-resistance and low gate charge, which translates to reduced conduction and switching losses. This makes it an excellent choice for high-efficiency power supplies, motor drives, and any energy-sensitive application where power conservation is critical.

Key Features:

  • Low R<sub>DS(on): Provides improved efficiency by minimizing on-state resistance, thus reducing power loss when the MOSFET is conducting.
  • High Continuous Drain Current (I<sub>D): Supports high current applications with its ability to handle a substantial continuous drain current, ensuring robust performance in demanding situations.
  • High-Temperature Performance: Capable of operating at high temperatures, making it suitable for applications with thermal constraints.
  • Single N-Channel: Offers simple drive requirements and is commonly used in a variety of circuit topologies.
  • Power Trench® Technology: Utilizes ON Semiconductor's proprietary Power Trench® process, which enhances the device's overall efficiency and thermal characteristics.

With its compact and durable design, the NVMFS6H824NLT1G is housed in a space-saving 5x6 mm² footprint, which is critical for modern electronics where board space is at a premium. The package is also RoHS compliant and Halogen-free, ensuring environmental considerations are met without compromising performance.

Whether you're designing power conversion systems, load switches, or any other application requiring a high-efficiency power MOSFET, the NVMFS6H824NLT1G from ON Semiconductor is a reliable and high-performing choice that will not disappoint.

For detailed specifications and application notes, designers and engineers are encouraged to consult the datasheet provided by ON Semiconductor to ensure proper usage and to maximize the potential of this powerful MOSFET in their designs.

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