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NVMFSC0D9N04CL

Part No NVMFSC0D9N04CL
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A/316A 8DFN / N-Channel 40 V 50A (Ta), 316A (Tc) 4.1W (Ta), 166W (Tc) Surface Mount 8-DFN (5x6.15)
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta), 316A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.87mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 4.1W (Ta), 166W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN (5x6.15)
Package / Case 8-PowerVDFN
Base Product Number NVMFSC0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000 pcs
Win Source Part Number 1383098-NVMFSC0D9N04CL
Ultra Librarian 3D Model Ultra Librarian NVMFSC0D9N04CL CAD Model

Description

The ON Semiconductor NVMFSC0D9N04CL is a cutting-edge Silicon Carbide (SiC) MOSFET that delivers superior performance for high-efficiency power conversion applications. Designed to meet the growing demands for energy efficiency and power density, this SiC MOSFET is an ideal solution for a wide range of applications including electric vehicles (EVs), solar inverters, and industrial power supplies.

Key Features:

  • Low On-Resistance: The NVMFSC0D9N04CL offers an extremely low on-resistance (R<sub>DS(on)) of just 90 mΩ at 25°C, which reduces conduction losses and improves overall system efficiency.
  • High Blocking Voltage: With a maximum blocking voltage (V<sub>DS) of 900V, this SiC MOSFET can handle high voltage applications with ease, providing reliable performance in demanding environments.
  • Fast Switching Speed: The fast intrinsic diode with low reverse recovery charge (Q<sub>rr) ensures minimal switching losses and makes the NVMFSC0D9N04CL suitable for high-frequency power converters.
  • High-Temperature Operation: Capable of operating at junction temperatures up to 175°C, the device ensures stable performance even under extreme conditions.
  • Robust Design: The NVMFSC0D9N04CL is designed to be rugged and reliable, with a robust body diode that can handle high surge currents.

Benefits:

  • Energy Savings: The low on-resistance and fast switching capabilities lead to significantly reduced power losses, translating to energy savings and reduced heat generation.
  • Compact System Design: Due to its high efficiency and thermal performance, systems can be designed with smaller heatsinks and overall footprint, saving space and cost.
  • Longer System Life: The enhanced thermal performance and reliability contribute to longer system life, reducing maintenance and replacement costs.

The ON Semiconductor NVMFSC0D9N04CL SiC MOSFET is a testament to ON Semiconductor's commitment to providing advanced semiconductor solutions that enable more efficient use of energy in a wide array of power applications. Its robustness, efficiency, and high performance make it an exemplary choice for designers looking to optimize their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.0532 $56.3724
16+ $6.6077 $105.7232
24+ $6.4012 $153.6288
33+ $6.1948 $204.4284
42+ $5.9883 $251.5086
56+ $5.3688 $300.6528
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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