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NVMFWS004N10MCT1G

Part No NVMFWS004N10MCT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5DFN / N-Channel 100 V 21A (Ta), 138A (Tc) 3.8W (Ta), 164W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta) , 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 48A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
Power Dissipation (Max) 3.8W (Ta) , 164W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFWS004
Standard Package 1
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351231-NVMFWS004N10MCT1G
Ultra Librarian 3D Model Ultra Librarian NVMFWS004N10MCT1G CAD Model

Description

ON Semiconductor NVMFWS004N10MCT1G Overview

The NVMFWS004N10MCT1G is a cutting-edge power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to cater to the demanding needs of modern electronic circuits, providing high efficiency, reliability, and performance. The NVMFWS004N10MCT1G is particularly suitable for a wide range of applications, including power management, computing, automotive, and industrial systems.

Key Features

  • Low On-Resistance: The device offers an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capacity: With its ability to handle a continuous drain current (I<sub>D), the NVMFWS004N10MCT1G is well-suited for high-power applications that require robust current handling capabilities.
  • Power Dissipation: Excellent power dissipation characteristics enable the device to manage thermal conditions effectively, ensuring stable performance under varying operational loads.
  • Advanced Packaging: The MOSFET comes in a compact, surface-mountable package that allows for efficient space utilization on printed circuit boards (PCBs).

Applications

Due to its high efficiency and power handling capabilities, the NVMFWS004N10MCT1G is ideal for a variety of applications, including but not limited to:

  • DC/DC converters
  • Motor drives
  • Power supplies
  • Battery management systems
  • Load switches
  • Automotive applications

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products that meet stringent industry standards. The NVMFWS004N10MCT1G is no exception, as it is manufactured with the highest level of precision and subjected to rigorous testing to ensure it meets the reliability and performance expectations of customers.

Environmental Compliance

ON Semiconductor understands the importance of environmental stewardship and designs products with ecological considerations in mind. The NVMFWS004N10MCT1G is compliant with RoHS directives, reflecting the company's dedication to reducing the environmental impact of its products.

Overall, the NVMFWS004N10MCT1G from ON Semiconductor is a testament to the company's commitment to providing advanced solutions that drive innovation across various electronic applications.

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