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NVMJS1D3N04CTWG

Part No NVMJS1D3N04CTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 41A/235A 8LFPAK / N-Channel 40 V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 8-LFPAK
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta) , 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta) , 128W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-LFPAK
Package / Case SOT-1205, 8-LFPAK56
Base Product Number NVMJS1
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351221-NVMJS1D3N04CTWG
Ultra Librarian 3D Model Ultra Librarian NVMJS1D3N04CTWG CAD Model

Description

The NVMJS1D3N04CTWG is a cutting-edge power MOSFET from ON Semiconductor, designed to provide efficient power management and switching capabilities for a wide range of applications. This device is a testament to ON Semiconductor's commitment to delivering high-performance and reliable components for the modern electronics landscape.

Key Features

  • Low R<sub>DS(on): The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications where it is deployed.
  • High Continuous Drain Current (I<sub>D): With the capability to handle a high continuous drain current, the NVMJS1D3N04CTWG is well-suited for high-power applications, ensuring robust performance under demanding conditions.
  • High Switching Speed: The fast switching speed of this MOSFET makes it an ideal choice for high-frequency power switching applications, contributing to reduced switching losses and better performance.
  • Enhanced Thermal Performance: The device's package is engineered to provide superior thermal performance, ensuring reliability and longevity even in thermally challenging environments.
  • Robust Body Diode: The inclusion of a robust body diode provides reliable reverse recovery performance, which is crucial for applications involving inductive loads.

Applications

The NVMJS1D3N04CTWG is versatile and can be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • Renewable energy systems
  • Power management circuits

Product Specifications

Parameter Value R<sub>DS(on) Low I<sub>D High Switching Speed Fast Thermal Performance Enhanced Body Diode Robust

In conclusion, the NVMJS1D3N04CTWG from ON Semiconductor is a robust, high-performance MOSFET that offers a compelling solution for designers looking to improve the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8918 $56.7540
65+ $1.5523 $100.8995
100+ $1.5038 $150.3800
140+ $1.4553 $203.7420
180+ $1.4068 $253.2240
240+ $1.2612 $302.6880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,980 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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