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NVMYS1D3N04CTWG

Part No NVMYS1D3N04CTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description TRENCH 6 40V SL NFET / N-Channel 40 V 43A (Ta), 252A (Tc) 3.9W (Ta), 134W (Tc) Surface Mount LFPAK4 (5x6)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 43A (Ta), 252A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4855 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.9W (Ta), 134W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK
Base Product Number NVMYS1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1352932-NVMYS1D3N04CTWG
Ultra Librarian 3D Model Ultra Librarian NVMYS1D3N04CTWG CAD Model

Description

ON Semiconductor NVMYS1D3N04CTWG Overview

The ON Semiconductor NVMYS1D3N04CTWG is a high-performance, N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This device is part of ON Semiconductor's NVFET series, which are known for their low on-resistance and fast switching performance. The NVMYS1D3N04CTWG is an ideal choice for power management tasks where space is at a premium and energy efficiency is a priority.

Key Features

  • Low On-Resistance: The MOSFET features a very low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency.
  • High Current Capacity: With the ability to handle a continuous drain current (I<sub>D), this component is suitable for high-power applications.
  • Fast Switching Speed: The fast switching characteristics of this MOSFET make it an excellent choice for high-frequency power switching applications.
  • Robust Thermal Performance: The device's power package is designed to offer excellent thermal performance, ensuring reliability even under high power operation.
  • Low Gate Charge: A low total gate charge (Q<sub>G) reduces switching losses, which is critical for power efficiency in applications such as DC-DC converters.

Applications

  • DC-DC Converters
  • Power Supply Modules
  • Motor Drives
  • Battery Management Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Product Specifications

The NVMYS1D3N04CTWG MOSFET operates with a 40V drain-source voltage (V<sub>DS). It provides a maximum continuous drain current of 300A at 25°C, which ensures that it can handle high current loads with ease. The device is encapsulated in a TO-247 package, which is known for its high power dissipation capabilities. The combination of these features makes the NVMYS1D3N04CTWG a robust and efficient solution for power management applications.

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The NVMYS1D3N04CTWG has been rigorously tested to meet stringent industry standards, ensuring long-term reliability and performance in the field. The device is RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability and safety.

Whether you're designing power systems for consumer electronics, industrial automation, or automotive technology, the NVMYS1D3N04CTWG offers the performance and reliability needed to power your innovations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8622 $55.8660
70+ $1.5279 $106.9530
105+ $1.4802 $155.4210
140+ $1.4324 $200.5360
185+ $1.3847 $256.1695
245+ $1.2415 $304.1675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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