The SBC847BPDW1T1G from ON Semiconductor is a cutting-edge bipolar junction transistor (BJT) that exemplifies the company's commitment to providing high-performance components for a wide range of electronic applications. This BJT is designed to offer both high efficiency and reliability, making it an ideal choice for designers looking to optimize their circuit designs.

Key Features

• Device Type: PNP Bipolar Transistor
• Configuration: Dual
• Collector- Emitter Voltage (VCEO): 45V
• Collector-Base Voltage (VCBO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 200 to 600 at 10mA, 5V
• Power Dissipation (Pd): 200mW
• Operating and Storage Junction Temperature Range: -55 to +150°C
• Package / Case: SC-70-6 (SOT-363)

Applications

The SBC847BPDW1T1G transistor finds its applications in a variety of fields due to its versatility and high performance. It is particularly suitable for use in:

• Pre-amplification circuits
• Signal processing
• Audio amplifiers
• Switching and linear amplification
• Power management functions

Product Advantages

ON Semiconductor's SBC847BPDW1T1G offers several advantages for electronic designs. Its dual configuration allows for compact circuit designs, saving space and reducing the need for additional components. The high current gain ensures efficient operation, while the wide operating temperature range makes it suitable for various challenging environments. Additionally, the SC-70-6 package is designed for surface-mount technology, enabling automated assembly processes and contributing to reduced manufacturing costs.

Quality and Reliability

ON Semiconductor is known for its stringent quality control measures, and the SBC847BPDW1T1G is no exception. This product is built to meet high standards of reliability, ensuring long-term performance and stability in your electronic designs. With ON Semiconductor's reputation for quality, you can trust the SBC847BPDW1T1G to be a dependable component in your projects.