ON Semiconductor SBC847BPDW1T3G - NPN/PNP Bipolar Transistor

The ON Semiconductor SBC847BPDW1T3G is a versatile and high-performance NPN/PNP bipolar transistor that offers a perfect solution for a wide range of electronic applications. This dual transistor is designed to provide excellent current gain and high collector current, making it suitable for amplification and switching applications.

Key Features:

• Transistor Type: NPN/PNP
• Configuration: Dual
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 200 to 600 at 10mA VCE
• Power Dissipation (Pd): 200mW
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: Surface Mount
• Package / Case: SC-88/SC70-6/SOT-363

The SBC847BPDW1T3G is built with ON Semiconductor's cutting-edge technology, ensuring reliable performance and energy efficiency. Its small SC-88/SC70-6/SOT-363 package makes it ideal for space-constrained applications while still providing the thermal performance required for consistent operation.

This dual bipolar transistor is commonly used in signal processing, power management, and control systems. Its high current gain and low saturation voltage are particularly beneficial in low-power applications. Additionally, the SBC847BPDW1T3G is RoHS compliant and features a moisture sensitivity level of 1, which ensures long-term reliability even in humid conditions.

Whether you're designing consumer electronics, industrial machinery, or automotive systems, the ON Semiconductor SBC847BPDW1T3G offers the performance and durability needed to create efficient and reliable designs.