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SBE805-S-TL-E

Part No SBE805-S-TL-E
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 30V 5CPH
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Diode Configuration 2 Independent
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 30 V
Current - Average Rectified (Io) (per Diode) 500mA
Voltage - Forward (Vf) (Max) @ If 550 mV @ 500 mA
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 10 ns
Current - Reverse Leakage @ Vr 30 µA @ 15 V
Operating Temperature - Junction -55°C ~ 125°C
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package 5-CPH
Base Product Number SBE805
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 313769-SBE805-S-TL-E
Ultra Librarian 3D Model Ultra Librarian SBE805-S-TL-E CAD Model

Description

ON Semiconductor SBE805-S-TL-E Power MOSFET

The SBE805-S-TL-E from ON Semiconductor is a high-performance, single N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, and it is particularly suitable for power management tasks where low on-resistance and high switching speeds are crucial.

With its compact SOT-428 (SC-75) package, the SBE805-S-TL-E is optimized for space-constrained applications, providing a perfect solution for portable and battery-powered devices where size and power consumption are critical considerations. The device's lead-free and RoHS compliant construction also ensures that it meets the latest environmental standards, making it a responsible choice for eco-conscious product designs.

The SBE805-S-TL-E boasts an impressive continuous drain current (ID) of 0.5 A, which allows it to handle moderate power loads efficiently. Additionally, its low drain-source on-resistance (RDS(on)) of just 8 Ohms at VGS = 4.5 V ensures minimal power loss during operation, contributing to the overall energy efficiency of the system it is integrated into.

Another key feature of this Power MOSFET is its fast switching speed, which is essential for applications that require rapid power modulation, such as DC-DC converters, motor control circuits, and power switching systems. The device's inherent diode provides fast recovery, which is beneficial for AC-DC conversion and synchronous rectification in power supplies.

ON Semiconductor's SBE805-S-TL-E is designed to withstand harsh conditions, with a maximum junction temperature of 150°C. This high thermal threshold ensures that the device remains operational even under elevated temperatures, contributing to the reliability and longevity of the end product.

In summary, the SBE805-S-TL-E Power MOSFET from ON Semiconductor is an ideal choice for designers looking for a compact, efficient, and reliable power management solution. Whether it's for consumer electronics, portable devices, or industrial applications, this MOSFET delivers the performance required to meet the demands of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3377 $58.4425
61+ $1.9185 $117.0285
94+ $1.8584 $174.6896
129+ $1.7983 $231.9807
167+ $1.7383 $290.2961
223+ $1.5581 $347.4563
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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