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SHN2D02FUTW1T1G

Part No SHN2D02FUTW1T1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Diode Configuration 3 Independent
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 80 V
Current - Average Rectified (Io) (per Diode) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 3 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V
Operating Temperature - Junction 150°C (Max)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number SHN2D02
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 1282999-SHN2D02FUTW1T1G
Ultra Librarian 3D Model Ultra Librarian SHN2D02FUTW1T1G CAD Model

Description

ON Semiconductor SHN2D02FUTW1T1G Overview

The SHN2D02FUTW1T1G from ON Semiconductor is a state-of-the-art, high-performance, dual N-channel Small Signal MOSFET designed to deliver efficient power management and signal processing in a compact package. This product is part of ON Semiconductor's portfolio of MOSFETs that offer designers a balanced combination of fast switching, low on-resistance, and cost-effectiveness.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which minimizes conduction losses and enhances overall efficiency, making it ideal for power-sensitive applications.
  • High-Speed Switching: With its high-speed switching capabilities, the SHN2D02FUTW1T1G is well-suited for high-frequency applications, providing improved performance and reduced switching losses.
  • Dual N-Channel Configuration: The dual N-channel configuration allows for flexibility in design, enabling the use of a single component for dual functions, thereby saving space and reducing component count.
  • SOT-363 Package: The device is housed in a compact SOT-363 package, which is optimized for minimal footprint and is suitable for use in space-constrained applications.
  • Low Threshold Voltage: A low threshold voltage ensures that the MOSFET can be easily driven at lower voltages, which is beneficial for battery-operated devices and low-voltage circuits.

Applications

The SHN2D02FUTW1T1G is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery-powered Devices
  • Load/Power Switches
  • Signal Processing Units
  • Portable Electronic Devices

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability. The SHN2D02FUTW1T1G is manufactured with the highest standards, ensuring that it meets the rigorous demands of industrial and consumer applications. It is designed to withstand harsh environments and provide a long operational lifespan, making it a reliable choice for designers and engineers.

With its excellent performance characteristics and ON Semiconductor's reputation for quality, the SHN2D02FUTW1T1G is an ideal choice for those looking to incorporate an efficient and reliable MOSFET into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1328 $50.4640
920+ $0.1090 $100.2800
1,425+ $0.1056 $150.4800
1,960+ $0.1022 $200.3120
2,535+ $0.0988 $250.4580
3,390+ $0.0886 $300.3540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 760 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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