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SMMBT3906LT3G

Part No SMMBT3906LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features Bipolar (BJT) Transistor 40 V 200 mA 300 mW
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101
Package Reel - TR
Family Name SMMBT3906
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number SMMBT3906LT3GOSTR, SMMBT3906LT3GOSDKR, SMMBT3906LT3G-ND, SMMBT3906LT3GOSCT
Quantity per package 10000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 851124-SMMBT3906LT3G
Ultra Librarian 3D Model Ultra Librarian SMMBT3906LT3G CAD Model

Description

ON Semiconductor SMMBT3906LT3G PNP Transistor

The ON Semiconductor SMMBT3906LT3G is a versatile and highly efficient PNP bipolar junction transistor (BJT) that is designed for general-purpose amplifier and switching applications. This small-signal transistor is part of the high-performance SMMBT series, which is known for its reliability and robustness in a wide variety of electronic circuits.

The SMMBT3906LT3G is housed in a compact SOT-23 surface-mount package, making it suitable for automated assembly processes and ideal for space-constrained applications. It features a collector-emitter voltage (VCEO) of 40V and a collector current (IC) of up to 200mA, providing sufficient headroom for moderate power applications. The device also boasts a collector-base voltage (VCBO) of 40V and an emitter-base voltage (VEBO) of 5V.

One of the key attributes of the SMMBT3906LT3G is its low saturation voltage, which minimizes power loss and enhances efficiency when the transistor is in the 'on' state. This characteristic is particularly important in battery-powered devices where energy conservation is critical. Additionally, the transistor has a fast switching speed, which is beneficial in applications requiring high-frequency operation.

The SMMBT3906LT3G is also characterized by its high gain-bandwidth product, which allows it to maintain gain at higher frequencies. This makes the transistor suitable for use in amplification stages of audio and RF circuits. The device's high input impedance ensures minimal loading on the previous stage, while its low output impedance allows for effective power transfer to the load.

ON Semiconductor has designed the SMMBT3906LT3G with thermal and electrical stability in mind, ensuring reliable performance over its entire operating temperature range. This, combined with its excellent current gain linearity, makes the transistor an excellent choice for linear amplification applications.

Whether you're designing consumer electronics, industrial control systems, or portable devices, the SMMBT3906LT3G from ON Semiconductor is an excellent choice for a wide range of applications that require a high-performance PNP transistor in a small footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,995+ $0.0251 $50.0745
4,855+ $0.0206 $100.0130
7,540+ $0.0199 $150.0460
10,365+ $0.0193 $200.0445
13,445+ $0.0186 $250.0770
17,965+ $0.0167 $300.0155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 1995 pcs
Order Increment : 1 pcs
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