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Same model may have multiple batches, images only for reference.
IRLML2803GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLML2803GTRPBF

Part No IRLML2803GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.2A SOT-23-3
Datasheet
IRLML2803GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 85pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540mW (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 910mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro3/SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1047573-IRLML2803GTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLML2803GTRPBF CAD Model

Description

The Infineon Technologies IRLML2803GTRPBF is a MOSFET transistor that comes in a Micro3/SOT-23 package.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.2A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 5nC @ 10V
  • Maximum Input Capacitance: 85pF @ 25V
  • Maximum Rds On at Id,Vgs: 250 mOhm @ 910mA, 10V
  • Suitable For: Use in Discrete Semiconductor Products
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 540mW (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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