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SMUN5114T3G

Part No SMUN5114T3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 202MW SC70-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer onsemi
Packaging Reel - TR
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 202 mW
Mounting Surface Mount
Case / Package SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number SMUN5114
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number 2156-SMUN5114T3G-488
Standard Package 10,000
Win Source Part Number 1325650-SMUN5114T3G
Ultra Librarian 3D Model Ultra Librarian SMUN5114T3G CAD Model

Description

ON Semiconductor SMUN5114T3G Product Overview

The SMUN5114T3G is a versatile and efficient bipolar junction transistor (BJT) from ON Semiconductor, renowned for its reliability and performance in a variety of electronic applications. This PNP transistor is designed to meet the stringent requirements of modern electronic circuits, offering a combination of low voltage operation and high current handling capabilities.

Key Features

  • High Current Capacity: The SMUN5114T3G can handle continuous collector currents up to 1 A, making it suitable for moderate to high-power applications.
  • Low Voltage Operation: With a collector-emitter voltage (VCEO) of -50 V, it is ideal for use in low voltage circuits, providing efficient operation and power management.
  • Power Dissipation: It has a power dissipation of 225 mW, which ensures that the transistor can handle significant energy without overheating, thus maintaining stability and reliability.
  • Gain Bandwidth Product (fT): The device features a gain bandwidth product of 50 MHz, which is indicative of its good frequency response, suitable for amplification in RF applications.
  • SOT-23 Package: The transistor comes in a compact SOT-23 package, which is ideal for space-constrained applications and allows for efficient PCB layout design.

Applications

The SMUN5114T3G is suited for a wide range of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Power management circuits in portable devices
  • Switching applications in consumer electronics
  • Driver stages in amplifiers and regulators

Quality and Reliability

ON Semiconductor is committed to providing high-quality products, and the SMUN5114T3G is manufactured to meet the company's rigorous standards. It is designed for long-term reliability, ensuring consistent performance even under varying environmental conditions. With its robust construction and proven design, the SMUN5114T3G is an excellent choice for designers looking for a dependable PNP transistor for their electronic projects.

Overall, the SMUN5114T3G by ON Semiconductor is a testament to the company's dedication to innovation and excellence in the field of semiconductor technology. Its combination of power, efficiency, and compact form factor make it a valuable component in any electronic designer's toolkit.

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