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SVD5865NLT4G

Part No SVD5865NLT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A/46A DPAK / N-Channel 60 V 10A (Ta), 46A (Tc) 3.1W (Ta), 71W (Tc) Surface Mount DPAK-3
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 71W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SVD5865
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353332-SVD5865NLT4G
Ultra Librarian 3D Model Ultra Librarian SVD5865NLT4G CAD Model

Description

ON Semiconductor SVD5865NLT4G Product Overview

The ON Semiconductor SVD5865NLT4G is a state-of-the-art, high-performance power MOSFET designed for a variety of applications that demand efficient power management and reliability. This robust component is engineered to deliver exceptional performance in a compact form factor, making it an ideal choice for space-constrained environments.

Key Features

  • Low On-Resistance: The SVD5865NLT4G boasts a very low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation. This feature is crucial for applications that require high current handling while maintaining low heat generation.
  • High Switching Speed: With fast switching capabilities, this MOSFET can operate at high frequencies, which is beneficial for power supply applications, including DC-DC converters and motor control circuits.
  • Optimized Gate Charge: The optimized gate charge (Q<sub>G) of the SVD5865NLT4G allows for reduced switching losses and improved overall system efficiency, making it an excellent choice for power-intensive applications.
  • Robust Thermal Performance: The advanced package design provides superior thermal performance, ensuring that the device operates within its specified temperature range even under high current conditions.

Applications

The versatility of the SVD5865NLT4G MOSFET makes it suitable for a wide range of applications, including:

  • Power Management Systems
  • DC-DC Converters
  • Motor Drives and Controllers
  • Switching Regulators
  • Battery Management Circuits
  • Load Switches
  • Power Tools

Quality and Reliability

ON Semiconductor is renowned for its commitment to quality and reliability, and the SVD5865NLT4G is no exception. It is built to meet the rigorous standards of the industry, ensuring long-term performance and stability in even the most demanding applications.

Environmental Compliance

The SVD5865NLT4G is compliant with RoHS (Restriction of Hazardous Substances) regulations, which means it is free from specific hazardous materials commonly used in electronics. This compliance reflects ON Semiconductor's dedication to environmental responsibility and the promotion of sustainable product solutions.

In summary, the SVD5865NLT4G from ON Semiconductor is a powerful and reliable component that offers exceptional efficiency, fast switching, and robust thermal performance, making it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6272 $50.1760
175+ $0.5875 $102.8125
265+ $0.5677 $150.4405
380+ $0.5280 $200.6400
495+ $0.5081 $251.5095
615+ $0.4883 $300.3045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 79,850 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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