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T60N02R

Part No T60N02R
Manufacturer ON Semiconductor
Catalog Electronic Wholesale
Sample
Rohs State Need to verify
ECAD Module
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Reference Date Code 03+
Reference case SOT252
Manufacturer ON Semiconductor
Manufacturer Homepage www.onsemi.com
RoHS State Request Verification
Win Source Part Number 757073-T60N02R
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian T60N02R CAD Model

Description

The ON Semiconductor T60N02R represents a robust and efficient solution for power management and switching applications. This N-channel Power MOSFET is designed to deliver high performance with low on-resistance and minimal power loss, making it an ideal choice for a wide range of electronic devices.

Key Features

  • Low R<sub>DS(on): The T60N02R boasts a low drain-to-source on-resistance, which means it can handle high currents without dissipating excessive power as heat. This feature ensures efficient operation and contributes to the longevity of the device.
  • High Current Capacity: With the ability to support a continuous drain current, this MOSFET can manage significant power levels, suitable for heavy-duty operations.
  • Fast Switching Speed: The device is engineered for fast switching, reducing transition losses and improving performance in high-frequency applications.
  • Thermal Stability: The T60N02R is designed to maintain its performance over a wide temperature range, ensuring reliability under varying environmental conditions.

Applications

The versatility of the T60N02R N-Channel Power MOSFET makes it suitable for a diverse array of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • LED Lighting Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 20V Continuous Drain Current (I<sub>D) 60A Power Dissipation (P<sub>D) 3.8W R<sub>DS(on) 2.5mΩ Operating Temperature Range -55°C to +150°C

Overall, the ON Semiconductor T60N02R is a highly reliable and efficient N-Channel Power MOSFET that meets the requirements of modern electronic designs with its high current capability, low on-resistance, and fast switching performance.

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