The SFH 331-JK is a silicon NPN phototransistor manufactured by OSRAM Opto Semiconductors. It is designed for detecting visible and near-infrared radiation. This phototransistor is commonly used in applications where light detection is required, such as in optoelectronic sensors and control systems.

Applications:

• Light Barriers: Used to detect the presence or absence of an object by sensing the interruption of a light beam.
• Photoelectric Sensors: Used for object detection, position sensing, and proximity sensing in industrial automation.
• Optical Switches: Used to switch circuits based on the presence or absence of light.
• Encoders: Used to detect the position and speed of rotating shafts in motor control applications.
• Remote Control Systems: Used to receive infrared signals from remote controls.
• Light Meters: Used to measure the intensity of light.

Features:

• Silicon NPN Phototransistor: Provides high sensitivity to visible and near-infrared radiation.
• High Sensitivity: Detects even weak light signals.
• Fast Switching Speed: Enables rapid response to changes in light intensity.
• Compact Package: Small package size allows for easy integration into various applications.
• Wide Operating Temperature Range: Suitable for use in a variety of environmental conditions.
• Good linearity: The collector current increases linearly with the incident light.

Benefits:

• Accurate Light Detection: Provides reliable and accurate light detection for various applications.
• Easy to Use: Simple circuit design and easy integration.
• Long Lifespan: Solid-state design ensures a long and reliable operating life.
• Cost-Effective: Provides a cost-effective solution for light detection needs.
• Versatile: Suitable for a wide range of applications.

Additional Details:

The SFH 331-JK has a peak sensitivity wavelength in the near-infrared region, typically around 880nm. The collector-emitter breakdown voltage is typically 30V. The operating temperature range is typically from -40°C to +100°C. The package is a clear plastic package designed to maximize light transmission to the phototransistor. The collector current is dependent on the incident light intensity and the applied voltage. The device is lead-free and RoHS compliant. The viewing angle is dependent on the physical construction of the device, and it is recommended that the datasheet be consulted for precise details. The rise and fall times are fast allowing use in high speed circuits.