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2SB12990P

Part No 2SB12990P
Manufacturer Panasonic
Catalog Transistors (BJT) - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Panasonic Electronic Components
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 2A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 500mA, 4V
Power - Max 2 W
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F-A1
Base Product Number 2SB129
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1315863-2SB12990P
Ultra Librarian 3D Model Ultra Librarian 2SB12990P CAD Model

Description

The 1315863-2SB12990P is a PNP single bipolar transistor from Panasonic Electronic Components. It comes in a bulk package and has a maximum power of 2W. The transistor has a voltage collector emitter breakdown of 60V and a maximum collector current of 3A. It has a Vce saturation of 1V @ 50mA, 2A and a maximum collector cutoff of 100µA. The transistor has a DC current gain of 400 @ 500mA, 4V and a transition frequency of 30MHz. It is through-hole mountable and comes in a TO-220-3 Full Pack package with a TO-220F-A1 supplier device package. This transistor has an ECCN of EAR99 and an HTSUS of 8541.29.0075. It is obsolete and has a base product number of 2SB129.

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