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1214GN-180LV

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Part No	1214GN-180LV
Manufacturer	Microchip Technology
Catalog	Transistors - FETs, MOSFETs - RF
Description	RF MOSFET HEMT 50V 55-KR
Datasheet	1214GN-180LV Datasheet
Sample
Rohs State
ECAD Module
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Win Source Part Number	WS1310297-1214GN-180LV
Manufacturer	Microchip Technology
Category	Discrete Semiconductor Products > Transistors > FETs, MOSFETs > RF FETs, MOSFETs
Packaging	Bulk
Part Status	Active
Technology	HEMT
Frequency	1.2GHz ~ 1.4GHz
Gain	17dB
Voltage - Test	50 V
Current - Test	60 mA
Power - Output	180W
Voltage - Rated	150 V
Ultra Librarian 3D Model	Ultra Librarian 1214GN-180LV CAD Model

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Description

The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for L-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

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