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2SB792A-R(TX)

Part No 2SB792A-R(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Single
Description TRANS PNP 185V 0.05A SC-59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 185V
Max Vce (sat) 1V @ 3mA, 30mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 130 @ 10mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package Mini3-G1
Win Source Part Number 12597-2SB792A-R(TX)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB792A-R(TX) CAD Model

Description

Overview

The 2SB792A-R(TX) is a high-performance PNP bipolar junction transistor (BJT) optimized for audio amplification and general-purpose switching applications. Designed with precision and reliability, this transistor ensures consistent performance in diverse electronic circuits. With its distinctive construction, the 2SB792A-R(TX) is ideal for tasks that demand impeccable linear amplification.

Applications

  • Audio Amplification Systems
  • Signal Processing Circuits
  • Power Supply Switching
  • Automotive Electronics
  • Industrial Control Systems

Features and Benefits

  • High Current Gain: Delivers superior amplification capabilities, ensuring enhanced audio output.
  • Robust Construction: Engineered to withstand extensive cyclic stress, making it suitable for high-duty applications.
  • Low Saturation Voltage: Guarantees energy efficiency, conserving power while maintaining optimal performance.
  • Compact Package: Facilitates easy integration into existing circuit designs without requiring significant redesigns.

Additional Details

The 2SB792A-R(TX) is constructed with state-of-the-art technology, ensuring minimal thermal resistance and improved heat dissipation. This feature enhances the transistor's overall lifetime, making it a cost-effective solution for long-term projects. Its compatibility with various circuit topologies assures seamless adaptability and simplifies product development cycles.

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