The 2SK656TA is an N-channel MOS type field-effect transistor designed for VHF/UHF amplifier applications. Manufactured by Panasonic, this MOSFET is optimized for high gain and low noise performance in high-frequency circuits.

Applications

• VHF/UHF Amplifiers
• CATV Amplifiers
• Satellite Broadcasting Tuners
• Cordless Telephones
• Wireless Communication Systems

Features

• N-Channel MOSFET
• High Power Gain
• Low Noise Figure
• High Cut-off Frequency
• Excellent Linearity
• Surface Mount Package (SOT-23)

Benefits

• Improved Amplifier Performance: The 2SK656TA allows for achieving high gain and low noise in VHF/UHF amplifiers, resulting in superior signal amplification.
• Enhanced Communication Quality: Its low noise figure contributes to clearer and more reliable communication in wireless systems.
• Suitable for High-Frequency Applications: Optimized for use in circuits operating in the VHF and UHF bands, meeting the demands of modern communication technologies.
• Compact Design: The small SOT-23 package enables compact circuit designs, ideal for space-constrained applications.
• Stable Operation: Designed for stable performance under varying operating conditions, ensuring consistent results.

Technical Specifications

The 2SK656TA typically features a drain-source voltage (VDS) of 15V, a gate-source voltage (VGS) of ±8V, and a drain current (ID) of 20mA. It has a power dissipation of 150mW. The operating junction temperature range extends from -55°C to +150°C. The device is housed in a surface mount package (SOT-23). The typical gate threshold voltage is around 1V. The cut-off frequency is designed to be high, making it suitable for VHF/UHF applications. It is RoHS compliant, adhering to environmental standards.

The 2SK656TA's characteristics make it especially suited for the front-end amplification stages in communication equipment. Its low noise characteristics and high gain capabilities ensure optimal signal reception and amplification.