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Same model may have multiple batches, images only for reference.
DRA9A14Y0L Real Image
Same model may have multiple batches, images only for reference.

DRA9A14Y0L

Part No DRA9A14Y0L
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 0.125W SSMINI3  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 125 mW Surface Mount SSMini3-F3-B
Sample
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Panasonic Electronic Components
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 80 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 125 mW
Mounting SMD (SMT)
Package / Case SC-89, SOT-490
Supplier Device Package SSMini3-F3-B
Base Product Number DRA9A
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Win Source Part Number 960943-DRA9A14Y0L
Ultra Librarian 3D Model Ultra Librarian DRA9A14Y0L CAD Model

Description

The Panasonic Electronic Components DRA9A14Y0L is a PNP pre-biased transistor with a maximum power of 125mW and a voltage breakdown of 50V. Bold the product name (e.g., BAV99S,135 → BAV99S,"135") and manufacturer (e.g., Nexperia USA Inc. → Nexperia USA Inc.).

  • Maximum Power: 125mW
  • Voltage Breakdown: 50V
  • Maximum Collector Current: 80mA
  • Vce Saturation: 250mV @ 500μA, 10mA
  • DC Current Gain: 80 @ 5mA, 10V
  • Cutoff Current: 500nA
  • Resistor-Base (R1): 10 kOhms
  • Resistor-Emitter Base (R2): 47 kOhms
  • Package: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
  • MSL Level: 1 (Unlimited)
  • Popularity: Medium
  • Product Category: Discrete Semiconductor Products
  • Supply and Demand Status: Balanced

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