The KSC5338DTU is a high-voltage, fast-switching NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor (now ON Semiconductor). It is designed for use in a variety of high-voltage applications requiring efficient and reliable switching performance.

Applications

• Switch-mode power supplies (SMPS)
• Electronic ballasts for lighting
• High-voltage inverters
• Power factor correction (PFC) circuits
• Motor control circuits

Features

• High Collector-Emitter Breakdown Voltage: VCEO = 400V
• High Collector Current: IC = 3A
• Fast Switching Speed: tf (fall time) = 0.25μs (typical)
• Low Saturation Voltage: VCE(sat) = 1.5V (max) @ IC = 3A
• High Power Dissipation: PC = 30W
• RoHS Compliant

Benefits

• Improved Efficiency: The fast switching speed reduces switching losses, leading to higher efficiency in power supply and inverter applications.
• Reliable Performance: The high breakdown voltage ensures reliable operation in high-voltage environments.
• Reduced Component Count: Its robust characteristics can simplify circuit designs, potentially reducing the number of components required.
• Cost-Effective Solution: The KSC5338DTU offers a good balance of performance and cost, making it a suitable choice for various applications.
• Environmentally Friendly: RoHS compliance ensures that the device meets environmental regulations.

Technical Specifications

The KSC5338DTU is an NPN BJT with the following key specifications:

• Collector-Emitter Voltage (VCEO): 400V
• Collector-Base Voltage (VCBO): 700V
• Emitter-Base Voltage (VEBO): 9V
• Collector Current (IC): 3A
• Peak Collector Current (ICM): 6A
• Base Current (IB): 1.5A
• Total Power Dissipation (PC): 30W (Tc = 25°C)
• Operating and Storage Temperature Range: -65°C to +150°C

The device is typically supplied in a TO-126 package.