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Same model may have multiple batches, images only for reference.
BCX5310H6327XTSA1
Same model may have multiple batches, images only for reference.

BCX5310H6327XTSA1

Part No BCX5310H6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANSISTOR AF SOT89-4
Datasheet
BCX5310H6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 63 @ 150mA, 2V
Maximum Power Dissipation 2W
Frequency - Transition 125MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT89
Win Source Part Number 1022802-BCX5310H6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCX5310H6327XTSA1 CAD Model

Description

The Infineon Technologies BCX5310H6327XTSA1 is a high-performance PNP transistor designed for use in discrete semiconductor products.

  • Maximum Current Collector: 1A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
  • Typical Gain (hFE): 63 @ 150mA and 2V
  • Package: PG-SOT89
  • Maximum Power Dissipation: 2W
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2522 $58.0060
560+ $0.2070 $115.9200
865+ $0.2005 $173.4325
1,195+ $0.1940 $231.8300
1,540+ $0.1876 $288.9040
2,065+ $0.1682 $347.3330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,501 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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