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NSVMUN5212DW1T1G

Part No NSVMUN5212DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA - 250mW Surface Mount SC-88/SC70-6/SOT-363
Manufacturer ON Semiconductor
Package Reel - TR
Mounting Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Case / Package SC-88/SC70-6/SOT-363
Family Name NSVMUN5212
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number NSVMUN5212DW1T1G-ND, NSVMUN5212DW1T1GOSTR, NSVMUN5212DW1T1GOSDKR, NSVMUN5212DW1T1GOSCT
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887719-NSVMUN5212DW1T1G
Ultra Librarian 3D Model Ultra Librarian NSVMUN5212DW1T1G CAD Model

Description

ON Semiconductor NSVMUN5212DW1T1G Dual Bipolar Transistors

The NSVMUN5212DW1T1G from ON Semiconductor is a high-performance dual bipolar transistor that combines two independent NPN transistors in a single SOT-363 package. This compact and versatile component is designed for applications requiring a pair of transistors with matched characteristics, making it an ideal choice for a variety of electronic circuits such as signal processing, amplification, and switching applications.

Each transistor in the NSVMUN5212DW1T1G is capable of handling a collector-emitter voltage (VCEO) of up to 50V, with a collector current (IC) of 100mA. This enables the device to operate effectively in medium power applications. Additionally, the dual configuration allows for the creation of compact circuit designs, reducing the overall footprint on the PCB and simplifying the assembly process.

The NSVMUN5212DW1T1G features high current gain bandwidth product (fT) and low collector-emitter saturation voltage (VCE(sat)), which ensures efficient operation and low power dissipation during use. These characteristics make it suitable for high-speed switching and amplification, providing reliable performance in a wide range of electronic devices.

ON Semiconductor's commitment to quality is evident in the NSVMUN5212DW1T1G, which is built to meet stringent industry standards. The device is also RoHS compliant, making it an environmentally friendly choice for manufacturers looking to create green products.

Whether used in industrial, consumer, or automotive electronics, the NSVMUN5212DW1T1G offers designers a high degree of flexibility and performance. Its robust construction ensures long-term reliability, while its dual-transistor design streamlines circuit complexity. With ON Semiconductor's reputation for producing durable and efficient semiconductors, the NSVMUN5212DW1T1G is a dependable choice for your circuit design needs.

Overall, the NSVMUN5212DW1T1G is a testament to ON Semiconductor's ability to deliver high-quality components that combine functionality and innovation, making it an excellent addition to any electronic product design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,100+ $0.0526 $57.8600
2,675+ $0.0432 $115.5600
4,145+ $0.0418 $173.2610
5,715+ $0.0404 $230.8860
7,375+ $0.0392 $289.1000
9,870+ $0.0351 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,150 pieces
MOQ: 1100 pcs
Order Increment : 1 pcs
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