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UNR511FG0L

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Part No	UNR511FG0L
Manufacturer	Panasonic
Catalog	RF Transistors (BJT)
Description	TRANS PREBIAS PNP 150MW SMINI3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 150 mW Surface Mount SMini3-F2
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Panasonic Electronic Components
Package	Tape & Reel
Product Status	Obsolete
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	80 MHz
Power - Max	150 mW
Mounting	SMD (SMT)
Package / Case	SC-85
Supplier Device Package	SMini3-F2
Base Product Number	UNR511
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	UNR511FG0LCT,UNR511FG0LDKR,UNR511FG0LTR
Standard Package	3,000
Win Source Part Number	989793-UNR511FG0L
Ultra Librarian 3D Model	Ultra Librarian UNR511FG0L CAD Model

Alternative Products

Description

The UNR511FG0L by Panasonic Electronic Components is a tape & reel, SMD (SMT) PNP pre-biased transistor with a SC-85 package/case.

Manufacturer: Panasonic Electronic Components
Packaging: Tape & Reel
Mounting Type: SMD (SMT)
Transistor Type: PNP Pre-Biased
Package/Case: SC-85
Maximum Power: 150mW
Maximum Voltage: 50V
Maximum Current: 100mA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300μA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Frequency-Transition: 80MHz
Supplier Device Package: SMini3-F2
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Alternative Names: UNR511FG0LCT, UNR511FG0LDKR, UNR511FG0LTR

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