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Same model may have multiple batches, images only for reference.
UNR921FG0L Real Image
Same model may have multiple batches, images only for reference.

UNR921FG0L

Part No UNR921FG0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 125MW SSMINI3
Datasheet
UNR921FG0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMini3-F3
Win Source Part Number 119751-UNR921FG0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR921FG0L CAD Model

Description

The Panasonic Electronic Components UNR921FG0L is a NPN - Pre-Biased transistor with a maximum current collector of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Case/Package: SSMini3-F3
  • Frequency-Transition: 150MHz
  • Win Source Part Number: 119751-UNR921FG0L
  • Resistor Base (R1): 4.7k
  • Resistor Emitter Base (R2): 10k
  • Typical Gain (hFE) (Min): 30 @ 5mA, 10V
  • Maximum Power Dissipation: 125mW
  • Status: Obsolete (EOL)
  • Popularity: Medium

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