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PJP9NA90_T0_00001

Part No PJP9NA90_T0_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 900V N-CHANNEL MOSFET / N-Channel 900 V 9A (Ta) 205W (Tc) Through Hole TO-220AB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1634 pF @ 25 V
Power Dissipation (Max) 205W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJP9NA90_T0_00001
Standard Package 50
Win Source Part Number 1085299-PJP9NA90_T0_00001
Ultra Librarian 3D Model Ultra Librarian PJP9NA90_T0_00001 CAD Model

Description

The Panjit International Inc. MOSFET transistor is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

  • FET Channel Type: N-channel
  • Drain to Source Voltage: 900 V
  • Continuous Drain Current: 9A @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 25 V
  • Power Dissipation (Max): 205W (Tc)
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Supplier Package: TO-220AB
  • Operating Temperature Range: -55°C to 150°C (TJ)

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