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Same model may have multiple batches, images only for reference.
PJS6401_S1_00001 Panjit
Same model may have multiple batches, images only for reference.

PJS6401_S1_00001

Part No PJS6401_S1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 71mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 637 pF @ 15 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-6
Package / Case SOT-23-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1315543-PJS6401_S1_00001
Ultra Librarian 3D Model Ultra Librarian PJS6401_S1_00001 CAD Model

Description

This P-channel MOSFET is a high-performance transistor designed for use in discrete semiconductor products such as single MOSFETs.

  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 4.6A @ 25°C
  • Rds On (Max): 71mOhm @ 4.6A and 10V
  • Package: SOT-23-6
  • Mounting: Surface Mount Technology (SMT)
  • Packaging: Tape and Reel
  • Gate Charge (Qg): 15.5 nC @ 10 V
  • Input Capacitance (Ciss): 637 pF @ 15 Vds
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Panjit International Inc.

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