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PJW3P06A_R2_00001

Part No PJW3P06A_R2_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 60V P-CHANNEL ENHANCEMENT MODE M / P-Channel 60 V 3A (Ta) 3.1W (Ta) Surface Mount SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 30 V
Power Dissipation (Max) 3.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJW3P06A_R2_00001CT,3757-PJW3P06A_R2_00001TR,3757-PJW3P06A_R2_00001DKR
Standard Package 2,500
Win Source Part Number 1085348-PJW3P06A_R2_00001
Ultra Librarian 3D Model Ultra Librarian PJW3P06A_R2_00001 CAD Model

Description

The Panjit PJW3P06A_R2_00001 is an OEM electronic component that is widely used in various electronic devices.

  • Type: P-channel MOSFET transistor
  • Function: switch and amplify electronic signals
  • Maximum Drain to Source Voltage: 60V
  • Continuous Drain Current: 3A
  • On-Resistance: 190mOhm
  • Gate Charge: 8.3nC
  • Package: TO-261-4, TO-261AA
  • Suitability: surface mount applications
  • Popularity: low
  • Supply and Demand Status: shortage
  • Risk of Counterfeits: moderate

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