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Same model may have multiple batches, images only for reference.
UJ4C075060K3S Qorvo
Same model may have multiple batches, images only for reference.

UJ4C075060K3S

Part No UJ4C075060K3S
Manufacturer Qorvo US Inc.
Catalog FETs - Single
Description SICFET N-CH 750V 28A TO247-3
Datasheet
UJ4C075060K3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202150-UJ4C075060K3S
Manufacturer Qorvo
Category Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 750 V
Power Dissipation (Max) 155W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian UJ4C075060K3S CAD Model

Description

The Qorvo SiCFET is a single N-channel FET based on cascode SiCJFET technology.

  • Drain-to-Source Voltage (Vdss): 750V
  • Maximum Power Dissipation: 155W (Tc)
  • Temperature Range: -55°C to 175°C
  • Package: Tube
  • Mounting: Through-Hole
  • Status: Active

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