The 2SA1611-M5(T1-A) is a PNP silicon epitaxial planar transistor manufactured by Renesas Electronics America. This transistor is specifically designed for low-noise amplifier applications in the VHF and UHF bands. Its low noise figure and high gain make it suitable for sensitive receiver front-ends and other high-frequency circuits.

Applications

• Low-noise amplifiers (LNA)
• VHF/UHF receivers
• RF front-ends
• Oscillators
• Mixers

Features

• Low noise figure (NF = 1.5 dB typical at 200 MHz)
• High power gain (Gp = 10 dB typical at 200 MHz)
• High cutoff frequency (fT = 6.5 GHz)
• Small SOT-343 package
• PNP Silicon Epitaxial Planar Transistor

Benefits

• Improved receiver sensitivity
• Enhanced signal-to-noise ratio
• Reduced system noise
• Compact design for space-constrained applications
• High performance in high-frequency circuits

Additional Details

The 2SA1611-M5(T1-A) has a collector-emitter voltage (VCEO) of -12V, a collector current (IC) of -30mA, and a power dissipation of 150mW. The DC current gain (hFE) is typically in the range of 50 to 200. It is housed in a small SOT-343 surface mount package, making it ideal for compact electronic devices. The low noise figure ensures that the transistor adds minimal noise to the amplified signal, making it crucial for sensitive receiver applications. The high cutoff frequency enables operation at high frequencies without significant performance degradation.

The M5 designation likely refers to a specific gain grouping or packaging variation. The T1-A indicates tape and reel packaging. Consult the Renesas datasheet for specific details and performance curves.