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2SB1432

Part No 2SB1432
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single
Description PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Renesas Electronics America
Win Source Part Number 154685-2SB1432
Popularity Medium
Supply and Demand Status Balance
Family Name 2SB1432
Introduction Date April 12, 2002
ECCN EAR99
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SB1432 CAD Model

Description

Product Description

The 2SB1432 is a PNP BJT designed for high-power amplification and switching tasks. It is appreciated for its high efficiency and performance stability at higher voltages.

Features and Benefits

  • Substantial collector current capacity of 5A.
  • Collector-Emitter Voltage rating of 100V.
  • Enhanced thermal stability.
  • Optimized for high-frequency operations.

Applications

  • Power Amplifiers
  • Voltage Regulation
  • Switching Loads
  • Driver Circuits

When used with appropriate heat sinks, the 2SB1432 extends its reliability even under demanding conditions.

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