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NP15P06SLG-E1

Part No NP15P06SLG-E1
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 15A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1100pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 7.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060540-NP15P06SLG-E1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP15P06SLG-E1 CAD Model

Description

This active component has a maximum drain-source breakdown voltage of 60V and a continuous drain current of 15A (Ta) @ 25°C.

  • Maximum Rds On: 70 mOhm @ 7.5A, 10V
  • Temperature Range: 175°C (TJ)
  • Mounting: SMD (SMT) with a TO-252 (MP-3ZK) case / package

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.2446 $64.7122
16+ $7.5860 $121.3760
24+ $7.3481 $176.3544
33+ $7.1113 $234.6729
43+ $6.8746 $295.6078
57+ $6.1631 $351.2967
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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