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2SC2735JTR-EQ

Part No 2SC2735JTR-EQ
Manufacturer Renesas Electronics America
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 983679-2SC2735JTR-EQ
Categories OEM Parts(0-9)
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC2735JTR-EQ CAD Model

Description

The Renesas 2SC2735JTR-EQ is a silicon NPN epitaxial planar transistor designed for high-frequency amplification and switching applications. It's commonly used in various electronic circuits where reliable and efficient performance is required. Its low noise figure and high gain characteristics make it suitable for sensitive receiver and amplifier stages.

Applications:

  • Low-noise amplifiers (LNAs)
  • Oscillator circuits
  • Mixer circuits
  • High-frequency amplifiers
  • Switching circuits
  • RF (Radio Frequency) applications

Features:

  • NPN Epitaxial Planar Structure: Provides excellent high-frequency characteristics and reliability.
  • Low Noise Figure: Ensures minimal noise contribution in sensitive amplifier stages.
  • High Gain: Offers substantial signal amplification for improved circuit performance.
  • High Transition Frequency (fT): Enables operation at high frequencies with minimal signal degradation.
  • Small Package: Allows for compact circuit designs.

Benefits:

  • Improved Signal Reception: Low noise figure enhances the ability to detect weak signals.
  • Enhanced Amplifier Performance: High gain provides significant signal amplification, improving overall circuit performance.
  • Efficient High-Frequency Operation: High transition frequency ensures minimal signal loss at high frequencies.
  • Compact Circuit Design: Small package allows for the creation of smaller, more efficient electronic devices.
  • Reliable Performance: Epitaxial planar structure ensures consistent and dependable operation.

Additional Details:

The 2SC2735JTR-EQ features a collector-emitter voltage (VCEO) of typically 20V, a collector current (IC) of around 80mA, and a transition frequency (fT) in the GHz range. The noise figure is typically very low, often less than 1.5dB at high frequencies. It is available in a small surface-mount package (e.g., SOT-23). The operating temperature range is generally from -55°C to +150°C. It's commonly used in communication equipment, radar systems, and other high-frequency applications where low noise and high gain are critical. RoHS compliant.

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