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Same model may have multiple batches, images only for reference.
2SK1340-E Real Image
Same model may have multiple batches, images only for reference.

2SK1340-E

Part No 2SK1340-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5A TO-3P
Datasheet
2SK1340-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Input Capacitance 740pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 4 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1004701-2SK1340-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK1340-E CAD Model

Description

The Renesas Electronics America MOSFET is a powerful N-channel device with a drain-source breakdown voltage of 900V and continuous drain current of 5A @ 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 5A @ 25°C
  • Power Dissipation: 100W
  • Applications: Discrete semiconductor products
  • Mounting Type: Through-hole
  • Package: TO-3P
  • Gate-Source Voltage: ±30V
  • Input Capacitance: 740pF @ 10V
  • Rds on @ Id,Vgs: 4 Ohm @ 3A, 10V
  • Operating Temperature: Up to 150°C (TJ)
  • Status: Active

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34+ $3.4823 $118.3982
52+ $3.3738 $175.4376
71+ $3.2652 $231.8292
92+ $3.1555 $290.3060
123+ $2.8298 $348.0654
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