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2SK3108AZ

Part No 2SK3108AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220 Isolated
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 8 A
Drain to Source Resistance 400 mΩ
Drain to Source Voltage (Vdss) 200 V
Number of Pins 220
Resistance 400 mΩ
RoHS Compliant
Win Source Part Number 1002418-2SK3108AZ
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK3108AZ CAD Model

Description

The 2SK3108AZ is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics America. This MOSFET is designed for high-frequency power amplifier applications, particularly in VHF and UHF bands. It features high gain and low noise characteristics, making it suitable for use in communication equipment and broadcasting systems.

Applications

  • RF Power Amplifiers
  • VHF/UHF Transmitters
  • Mobile Radio Systems
  • Base Stations
  • Broadcasting Equipment

Features

  • N-Channel MOSFET: Provides efficient power amplification
  • High Power Gain: Delivers substantial signal amplification, improving transmission range and signal quality.
  • Low Noise Figure: Minimizes noise contamination in the amplified signal, ensuring clear and reliable communication.
  • High Breakdown Voltage: Ensures safe operation at high power levels.
  • Excellent Linearity: Reduces signal distortion, maintaining signal fidelity.

Benefits

  • Extended Transmission Range: High power gain increases the signal strength, allowing for longer-distance communication.
  • Improved Signal Quality: Low noise figure ensures clear and reliable transmission.
  • Enhanced System Performance: High breakdown voltage and excellent linearity contribute to stable and efficient operation.
  • Reduced Power Consumption: Efficient design minimizes power waste, resulting in lower operating costs.
  • Reliable Operation: Renesas' manufacturing expertise guarantees consistent and dependable performance.

Additional Details

The 2SK3108AZ is typically supplied in a surface-mount package designed for efficient heat dissipation. The device requires careful biasing and impedance matching to achieve optimal performance. Key specifications include drain-source voltage, gate-source voltage, drain current, power dissipation, and operating frequency. Detailed datasheets, application notes, and simulation models are provided by Renesas to assist engineers in designing with the 2SK3108AZ. Proper thermal management is critical to ensure long-term reliability. The MOSFET is commonly used in final stage amplifiers in communication transmitters, where high power and efficiency are paramount. Its high gain and low noise characteristics are essential for achieving clear and reliable signal transmission. Adherence to RoHS environmental standards is also a key feature.

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