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Same model may have multiple batches, images only for reference.
2SK3431-Z-E1 Real Image
Same model may have multiple batches, images only for reference.

2SK3431-Z-E1

Part No 2SK3431-Z-E1
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 83A TO220AB
Datasheet
2SK3431-Z-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 110nC @ 10V
Max Input Capacitance 6100pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 42A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 8528-2SK3431-Z-E1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK3431-Z-E1 CAD Model

Description

The Renesas Electronics America 2SK3431-Z-E1 is a MOSFET discrete semiconductor product with a through-hole mounting and a TO-220AB case/package.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 83A (Tc) @ 25°C
  • Maximum Power Dissipation: 1.5W (Ta), 100W (Tc)
  • Gate-Source Threshold Voltage: -
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 6100pF @ 10V
  • Maximum Rds On at Id,Vgs: 5.6 mOhm @ 42A, 10V
  • Popularity: Medium
  • Supply and Demand: Balanced

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